Impact of Gate Placement on RF Degradation in GaN High Electron Mobility Transistors
نویسندگان
چکیده
We have investigated RF degradation in GaN high electron mobility transistors (HEMTs) with different gate placement in the source-drain gap. We found that devices with a centered gate show different degradation behavior from those with the gate placed closer to the source. In particular, centered gate devices degraded through a mechanism that has a similar signature as that responsible for high-voltage DC degradation in the OFF state and is likely driven by voltage. In contrast, offset gate devices showed a large RS increase due to the combination of high voltage and high current stress condition.
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Impact of gate placement on RF power degradation in GaN high electron mobility transistors
We have investigated the RF power degradation of GaN high electron mobility transistors (HEMTs) with different gate placement in the source–drain gap. We found that devices with a centered gate show different degradation behavior from those with the gate placed closer to the source. In particular, centered gate devices degraded through a mechanism that has a similar signature as that responsibl...
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